RASIRC Home
 

H2O2 Gas for Annealing

Annealing and passivation are techniques used to repair atomic defects within the crystal that propagate into the wafer macrostructure, reducing efficiencies in microelectronics. Passivation, or thermal annealing, of the interface limits hole/electron recombination, removes dangling bonds, and reduces vacancies and dislocations at grain boundaries.

High concentration H2O2 gas delivered by the Peroxidizer® is well-suited for annealing applications where high speed deposition and low operating temperatures are required. H2O2 gas is a good oxidant that can penetrate deep structures. More aggressive oxidants like plasma and ozone can damage surface materials and sensitive structures. H2O2 gas reduces the required thermal budget, protecting against high heat exposure that causes film shrinkage.

The ability to replace water vapor and steam with hydrogen peroxide gas reduces time and operating temperature. High concentration hydrogen peroxide gas will enable the next generation gap fill technology, a must for success with 3D structures.

To learn more about how the Peroxidizer can assist with your processes, fill out this Peroxidizer Information Request form.

 

Downloads

Anhydrous Hydrogen Peroxide Technical Paper
Anhydrous Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition Technical Paper

Cheating Raoult's Law
Cheating Raoult's Law to
Enable Delivery of Hydrogen Peroxide as a Stable Vapor

Peroxidizer
Peroxidizer Datasheet

Related Materials

Request More Information

Recent News

July 13, 2017
RASIRC Presents TiN ALD Grown with BRUTE® Hydrazine at ALD Conference 2017

January 16, 2017
RASIRC Presents New Chemistries for Low Temperature Oxide and Nitride Films

Jan 4, 2017
Jonas Sundqvist
Bald Engineering Blog:RASIRC® to present New ALD chemistries for low temperature oxide and nitride films at ALD4Industry

September 6, 2016
RASIRC Presents on Surface Passivation of New Channel Materials at UCPSS: Atomic Layer Passivation enabled Hydrogen Peroxide Gas First Step

June 23, 2016
RASIRC Releases Technical Report on Hydrogen Peroxide Gas Delivery for ALD, Annealing and Cleaning in Semiconductor Processes

June 22, 2016
Jonas Sundqvist
Bald Engineering Blog: Hydrogen Peroxide Gas Delivery for ALD, Annealing, and Surface Cleaning in Semiconductor Processing

Feb 16, 2016
RASIRC Water Free Anhydrous Hydrogen Peroxide Demonstrates Five-Fold Increase in Hydroxyl Density

 

 
RASIRC Home