H2O2 Gas for Annealing
Annealing and passivation are techniques used to repair atomic defects within the crystal that propagate into the wafer macrostructure, reducing efficiencies in microelectronics. Passivation, or thermal annealing, of the interface limits hole/electron recombination, removes dangling bonds, and reduces vacancies and dislocations at grain boundaries.
High concentration H2O2 gas delivered by the Peroxidizer™ is well-suited for annealing applications where high speed deposition and low operating temperatures are required. H2O2 gas is a good oxidant that can penetrate deep structures. More aggressive oxidants like plasma and ozone can damage surface materials and sensitive structures. H2O2 gas reduces the required thermal budget, protecting against high heat exposure that causes film shrinkage.
The ability to replace water vapor and steam with hydrogen peroxide gas reduces time and operating temperature. High concentration hydrogen peroxide gas will enable the next generation gap fill technology, a must for success with 3D structures.
To learn more about how the Peroxidizer can assist with your processes, fill out this Peroxidizer Information Request form.