Hydrazine Gas for Low Temperature Nitrides

Hydrazine (H2NNH2) is an excellent low temperature thermal ALD nitride source. Next generation devices have low thermal budgets and high aspect ratio structures that create new challenges for nitride films. Ammonia generally does not yield quality films below 400C. Nitrogen created by plasma methods cannot uniformly coat the internal side walls of High Aspect Ratio structures and can cause surface damage.

Advantages of Hydrazine Gas

Hydrazine is more reactive than NH3, enabling thermal ALD at much less than 400°C. Hydrazine gas can penetrate high aspect ratio structures to create uniform films because it does not require a line of sight, unlike plasma methods. Other variants of hydrazine such as commonly supplied “Anhydrous” hydrazine contains large amounts of water contamination that leads to oxygen incorporation. Methylhydrazine and tButyl Hydrazine contain carbon that can contaminate films. All of these alternatives lead to device defects and poor electrical performance.

BRUTE® Vaporizer for Hydrazine Gas Delivery

RASIRC BRUTE Hydrazine delivers super high purity hydrazine gas into atomic layer deposition (ALD) processes. BRUTE Hydrazine combines highly purified liquid hydrazine and a low vapor pressure organic solvent that raises the flash point of the overall solution to provide additional safety. Precursor vapor pressure is maintained at levels viable for ALD under vacuum with or without a carrier gas.

Additional BRUTE Hydrazine Information




BRUTE Hydrazine
BRUTE Hydrazine

Recent News

July 13, 2017
RASIRC Presents TiN ALD Grown with BRUTE® Hydrazine at ALD Conference 2017

June 6, 2017
RASIRC to Exhibit and Present at Joint EUROCVD and Baltic ALD Conference

May 22, 2017
RASIRC Presents Ultra-High Purity Hydrazine Delivery at ECS Spring 2017

May 10, 2017
RASIRC Presents Hydrazine for Low Temperature ALD at ASMC 2017

April 19, 2017
RASIRC Presents Novel Reactive Chemistries for in-situ Surface Functionalization

March 23, 2017
RASIRC Presents Low Temperature ALD of Titanium Nitride at MAM 2017

January 16, 2017
RASIRC Presents New Chemistries for Low Temperature Oxide and Nitride Films

September 26, 20016
RASIRC® BRUTE® peroxide and hydrazine technology for leading edge memory and high performance logic

September 26, 2016
RASIRC Presents on Low Temperature Nitride Passivation at PRiME/ECS

September 6, 2016
RASIRC Presents on Surface Passivation of New Channel Materials at UCPSS: Atomic Layer Passivation enabled Hydrogen Peroxide Gas First Step

August 31, 2016
RASIRC Renews Funding for Atomic Layer Deposition Research at University of California, San Diego (UCSD): Gift donation supports one student researcher for one year

Recent Articles

Jan 4, 2017
Jonas Sundqvist
Bald Engineering Blog: RASIRC® to present New ALD chemistries for low temperature oxide and nitride films at ALD4Industry

December 14, 2016
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Rocket Fuel May Propel Moore's Law


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