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Hydrazine Gas for Low Temperature Nitrides

Hydrazine (H2NNH2) can be used as a low temperature thermal ALD nitride source. Next generation devices have low thermal budgets and high aspect ratio structures that create new challenges for nitride films. Ammonia is generally not reactive below 400C. Nitrogen created by plasma methods cannot uniformly coat the internal side walls of High Aspect Ratio structures and can cause surface damage.

Advantages of hydrazine gas

Hydrazine is more reactive than NH3, enabling thermal ALD at less than 300°C. Hydrazine gas can penetrate high aspect ratio structures to create uniform films because it does not require a line of sight, unlike plasma methods. Other variants of hydrazine such as hydrazine hydrate and methylhydrazine contain oxygen or carbon that can contaminate the film, leading to defects and poor electrical performance.

BRUTE vaporizer for hydrazine gas delivery

BRUTE HydrazineRASIRC BRUTE® Hydrazine delivers ultra-dry hydrazine gas into atomic layer deposition (ALD) processes. BRUTE Hydrazine combines anhydrous hydrazine and a low vapor pressure organic solvent that raises the flash point of the overall solution. A membrane delivery system within the BRUTE vaporizer is selective for hydrazine and not the organic solvent. This membrane also scavenges water and metal ions. Precursor vapor pressure is maintained at levels viable for ALD under vacuum with or without a carrier gas.

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Recent News

July 15, 2017
RASIRC Releases Next Generation RainMaker Humidification System for Fine Water Vapor Delivery

July 13, 2017
RASIRC Presents TiN ALD Grown with BRUTE® Hydrazine at ALD Conference 2017

June 6, 2017
RASIRC to Exhibit and Present at Joint EUROCVD and Baltic ALD Conference

May 22, 2017
RASIRC Presents Ultra-High Purity Hydrazine Delivery at ECS Spring 2017

May 10, 2017
RASIRC Presents Hydrazine for Low Temperature ALD at ASMC 2017

April 19, 2017
RASIRC Presents Novel Reactive Chemistries for in-situ Surface Functionalization

March 23, 2017
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January 16, 2017
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RASIRC® BRUTE® peroxide and hydrazine technology for leading edge memory and high performance logic

September 26, 2016
RASIRC Presents on Low Temperature Nitride Passivation at PRiME/ECS

September 6, 2016
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August 31, 2016
RASIRC Renews Funding for Atomic Layer Deposition Research at University of California, San Diego (UCSD): Gift donation supports one student researcher for one year

Recent Articles

Jan 4, 2017
Jonas Sundqvist
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BRUTE Hydrazine
BRUTE Hydrazine
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