RASIRC Presents on Low Temperature Nitride Passivation at PRiME/ECS
Brute Hydrazine Gas a safer source of Anhydrous Hydrazine for low temperature ALD
San Diego, Calif – September 26, 2016 – RASIRC will present a paper on innovations in surface passivation of new channel materials at the upcoming PRiME 2016/230th ECS Meeting sponsored by the Electrochemical Society (ECS), Electrochemical Society of Japan (ECSJ) and the Korean Electrochemical Society (KECS) held October 2-7 in Honolulu, Hawaii. RASIRC will present “Novel Anhydrous Hydrazine Delivery for Low Temperature Silicon Nitride Passivation of SiGe(110)” on Monday October 3 at 11:40 in Session G03: Atomic Layer Deposition Applications 12.
Dry Hydrazine Gas and Nitridation
Anhydrous Hydrazine gas can be an effective low temperature nitridation source when properly controlled. It is a particularly useful alternative to plasma for creating a thin layer of nitrides in high aspect structures. This nitride passivation layer limits diffusion across dielectric interfaces in FINFETs and MOSFETs. RASIRC BRUTE Hydrazine uses a proprietary membrane delivery system to enable delivery of pure hydrazine gas.
“Hydrazine vapor delivery will be an important source of nitrogen due to the need for low temperature deposition,” said Jeffrey Spiegelman, RASIRC President and Founder. “Tests confirm that passivation of SiGe(110) can be achieved at 275C without the need for damaging plasma.”
About BRUTE Hydrazine
BRUTE Hydrazine delivers water-free hydrazine (N2H4) gas into atomic layer deposition (ALD) processes. Brute Hydrazine provides a safer way to handle Hydrazine. The source vapor pressure is maintained at levels viable for thin film processing under vacuum with or without a carrier gas.