RASIRC Presents TiN ALD Grown with BRUTE® Hydrazine at ALD Conference 2017
BRUTE Peroxide and BRUTE Hydrazine showcased in technical presentations
San Diego, Calif – July 13, 2017–RASIRC will announce the latest generation of its BRUTE Hydrazine product line at the annual ALD Conference held July 15-18, 2017 in Denver, Colorado. At low temperatures, ammonia or nitrogen plasmas cannot grow nitride ALD films on three dimensional, high aspect ratio (HAR) structures. BRUTE Hydrazine solves this problem and enables process engineers to incorporate nitrides into new device architectures.
RASIRC Chief Technology Officer Dan Alvarez will present “Low Resistivity Titanium Nitride ALD: Low Temperature Enabled by the Use of Ultra‐High Purity Hydrazine” on Tuesday July 18, at 1:45PM in Room Plaza F. Alvarez is a contributing author on another paper and two posters to be presented during the conference. RASIRC will also present the latest findings related to novel reactive chemistries for in-situ surface functionalization at Booth #16.
“The next generation of semiconductors require a new generation of precursors suited for low temperature, three dimensional deposition processes,” said Jeffrey Spiegelman, RASIRC President and Founder. “Our BRUTE chemistries meet these requirements, enabling surface functionalization, selective deposition, oxidation or nitridation without causing surface damage.”
Technical Presentations and Posters
Alvarez and Spiegelman are contributing authors to the following presentations and posters:
- “Low Resistance ALD TiN from Low Temperature Thermal N2H4 + TiCl4”
4:30 Monday July 17, Room Plaza D - ALE+AF‐MoA13
Steven Wolf, M. Kavrik, J. Park, University of California San Diego; R. Holmes, D. Alvarez, J. Spiegelman, RASIRC; A. Kummel, University of California San Diego
- “Sequential Exposures of N2H4 + BCl3 on Copper, HOPG and Si0.7Ge0.3 Surfaces”
5:30 Monday July 17, Room Plaza Exhibit (Poster Session), AF‐MoP21
Steven Wolf, M. Breeden, M. Edmonds, K. Sardashti, M. Clemons, University of California San Diego; E. Yieh, H. Ren, S. Nemani, Applied Materials; D. Alvarez, RASIRC; A. Kummel, University of California San Diego
- “Anhydrous Hydrogen Peroxide Gas Delivery for Semiconductor Manufacturing: Optimal Delivery Conditions for ALD Processes”
5:30 Monday July 17, Room Plaza Exhibit (Poster Session), AM‐MoP1
D. Alvarez, J. Spiegelman, Keisuke Andachi, R. Holmes, Z. Shamsi, RASIRC
- “Low Resistivity Titanium Nitride ALD: Low Temperature Enabled by the Use of Ultra‐High Purity Hydrazine”
1:45 Tuesday July 18, Room Plaza F, AM+EM‐TuA2
Daniel Alvarez, J. Spiegelman, K. Andachi, R. Holmes, RASIRC; A. Kummel, S. Wolf, M. Kavrik, UCSD; M. Raynor, H. Shimizu, Matheson Tri‐Gas
BRUTE Hydrazine for Low Temperature Nitride ALD
Sub-400°C metal nitride deposition is required for next generation logic and memory devices due to thermal sensitivity of new materials. These low thermal budgets and high aspect ratio (HAR) structures create challenges for nitride deposition. Hydrazine gas is a strong nitridation designed specifically for low temperature ALD. BRUTE Hydrazine delivers this gas in a stable, reliable flow from a liquid source in a sealed vaporizer.
BRUTE Hydrazine enables low temperature ALD (sub-350°C) and low resistivity. This offers an alternative to both thermal ammonia and NH3 plasma processes, which have challenges below 400°C. Unlike commonly available liquid hydrazine, BRUTE Hydrazine gas is virtually water free and has a relatively high flash point. Highly reactive, BRUTE Hydrazine creates uniform nitride deposition for advanced materials.
BRUTE Chemistry for Surface Functionalization and Selective Deposition
BRUTE Peroxide is a novel oxidant that improves passivation and nucleation density at semiconductor interfaces when compared to water. Surface functionalization is denser and initiation is faster using this anhydrous hydrogen peroxide gas compared with alternatives. Key is that anhydrous hydrogen peroxide may react with only 1-2 monolayers of the substrate, ensuring that sub-surface oxidation is minimal. This allows for surface functionalization without surface damage, making BRUTE Peroxide potentially useful in ALE applications as well.
Both hydrazine and hydrogen peroxide are uniquely qualified for ALD and surface functionalization. Hydrazine has a weak N-N bond, is more reactive than ammonia and has less hydrogen to be trapped in the film. Hydrogen peroxide has a very weak O-O bond, is a stronger oxidant than water, less oxidizing than Ozone, and has lower steric hindrance then either molecule.
Conference attendees are invited to visit RASIRC at Booth #16. Representatives will be available to answer any questions and discuss exciting results from recent customer testing. Stop by to get the latest research papers and see a demonstration model of our unique solvent-based delivery system for BRUTE Hydrogen Peroxide and BRUTE Hydrazine. Also learn about the Peroxidizer® for high-volume surface hydroxylation and atomic layer deposition. Ask about Hydrogen Peroxide Steam.
RASIRC BRUTE® Peroxide and BRUTE Hydrazine both use a proprietary delivery system to enable delivery of pure gases. BRUTE Hydrazine is available in 250g and 750g replaceable units. BRUTE Peroxide is available in 300g and 900g replaceable units. Both BRUTE chemistries are also available in a compact Laboratory edition is also available for use under vacuum draw. This plug-and-play version enables universities, research institutes and advanced technology groups to work with the smaller amounts of chemistry for rapid thin film process screening. The Peroxidizer delivers hydrogen peroxide gas in stable, high concentrations from 12,500 to 50,000 ppm, which equates to 1.25 to 5% gas by volume. The system handles gas flows of 5 to 30 slm in vacuum or atmospheric conditions.