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Low Temperature Oxides
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Subheading
First Point
Device performance and size are limited by material heat tolerance in Middle of the Line (MOL) and Back-End of the Line (BEOL) processes. Improved metal contacts, thinner barrier layers and thinner liners are required to minimize parasitic losses as devices shrink.
Second Point
Current processes for new SiGe channel materials in logic devices are inadequate. Integration imposes new low temperature constraints for several process steps including TiN electrode, AlN2 heat spreader, InGaN MicroLED, and SiN side wall deposition.
Third Point
Memory density requirements for future 3-D NAND devices requires large increases in vertical scaling. Structural integrity may require 256 layers by 2021. Temperature limits on SiN deposition will decrease to 450°C-550°C.
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First Point
Hydrazine gas creates low resistivity TiN, SiN, AlN2, GaN, and InGaN films by delivering nitrides at low temperature.
Second Point
Hydrazine gas deposits uniform nitride film on high aspect ratio (HAR) features to create effective sidewall materials. This deposition is effective at temperatures as low as 320°C-350°C.
Third Point
Hydrazine gas builds high density, low wet-etch-rate (WER) SiN . Operating temperatures can be as low as 450°C-550°C.
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Subheading with Two Columns
First Column
Hydrazine is an excellent low temperature thermal ALD nitride source. Next generation devices have low thermal budgets and high aspect ratio structures that create new challenges for conformal III-V nitride films. Old solutions cannot meet these new challenges. Nitrogen from ammonia does not yield quality films below 400°C. Plasma delivery does not uniformly coat internal side walls of high aspect ratio structures and causes surface damage.
Second Column
- Highly reactive, enabling thermal ALD at much less than 400°C
- No line of sight required, providing uniform films on high aspect ratio structures
- No oxygen or carbon, eliminating contamination
- Fewer device defects
- Better electrical performance
Subheading with Media
Thermal ALD of TiN below 400°C with NH3/TiCl4 is problematic as Chlorine content increases and resistivity properties escalate. Use of RASIRC BRUTE® Hydrazine has been shown to yield resistivity far lower that ammonia at 400°C and nearly 5x lower at 300°C (Kummel).
Subheading with Media
Recent studies have shown that RASIRC BRUTE Hydrazine is capable of depositing high quality SiN down to temperatures of 320°C with good uniformity and conformality. Process optimization is underway to achieve density and Wet Etch Rates that approach those of high temperature SiN grown at 630°C with ammonia.
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Achieve crystalline Aluminum Nitride deposition with minimal oxygen contamination.
Processes to grow crystalline heat-spreading layers at low temperatures (≤400C) are of interest for several applications. Potential candidates for heat spreaders include diamond, hexagonal boron nitride (h-BN), aluminum nitride (AlN), and gallium nitride (GaN). AlN and GaN have already been reportedly grown at sufficiently low temperatures for widespread implementation.
See Latest Research on Oxides.
News & Views (Placeholder)
Low temperature Aluminium Nitride Deposition: Comparing Hydrazine and Ammonia
ALD TiN Evaluation Using BRUTE Hydrazine
BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity
RASIRC products generate and deliver water vapor, hydrogen peroxide and hydrazine gas in controlled, repeatable concentrations to critical processes.
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