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BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity
The semiconductor industry is continuously searching for new materials and chemistries to improve performance and manufacturability. Hydrazine is the leading molecule for thermal nitration at low temperatures. RASIRC’s Brute Hydrazine formulation improves the purity and safety which is enabling an alternative to plasma and ammonia processes. Titanium Nitride ALD films grown with BRUTE Hydrazine show great promise for use in emerging semiconductor manufacturing applications.