High Volume, High Concentration Hydrogen Peroxide Gas
The Peroxidizer is an excellent oxide source for low temperature ALD and ASD needed in next generation semiconductor devices.
Peroxidizer® Enables Semiconductor Applications
Tight Process Control
The Peroxidizer allows process engineers to control pressure, carrier gas flow and hydrogen peroxide concentration. This versatility enables tight control over processes, letting the engineer experiment to find optimal combination for new precursors, materials and architectures. The Peroxidizer delivers hydrogen peroxide gas concentrations from 12,500 to more than 50,000 ppm depending on flow rate. Carrier gas flow rates can range from 5 to 20slm supplying into both vacuum and atmospheric pressures. The Peroxidizer adjusts temperature to achieve the desired output.
Effective Surface Preparation
The Peroxidizer allows process engineers to control pressure, carrier gas flow and hydrogen peroxide concentration. This versatility enables tight control over processes, letting the engineer experiment to find optimal combination for new precursors, materials and architectures. The Peroxidizer delivers hydrogen peroxide gas concentrations from 12,500 to more than 50,000 ppm depending on flow rate. Carrier gas flow rates can range from 5 to 20slm supplying into both vacuum and atmospheric pressures. The Peroxidizer adjusts temperature to achieve the desired output.
Thermal Budget
High speed and low temperature are imperatives for next generation gap fill. Complex 3D structures are vulnerable to damage from reactants that are too aggressive. Ozone processes are aggressive and will damage protected surfaces, while plasma requires line of sight and cannot uniformly cover HAR structures. Water has been the go-to but requires high temperature to react, resulting in damage and migration of advanced materials.
Peroxidizer Beats Competition with High Concentration, Low Temperature
High Concentration
The Peroxidizer delivers 10x concentration of hydrogen peroxide gas at a given temperature and delivers droplet-free gas at temperatures as low as 80 °C. The Peroxidizer delivers up to 5% hydrogen peroxide gas by volume from 30% hydrogen peroxide liquid solution.
Bigger Precursor Range
New materials and architectures are more temperature sensitive than their predecessors, such as SiGe and new memory alloys, forcing lower thermal budgets. Hydrogen peroxide gas from the Peroxidizer has higher reactivity at lower temperature, increasing the range of precursors available to process engineers.
Strong Oxidant
Hydrogen peroxide gas readily converts to highly reactive OH radicals , creating a high density ALD nucleation and faster reactions with precursors. Oxygen plasma can penetrate below the interface layer, damaging the bottom electrode and surface structures. Plasma cannot reach the bottom of deep structures as it requires line-of-sight, so coatings may be non-uniform, favoring the top of the structure.
Low Temperature
High concentration hydrogen peroxide gas delivered by the Peroxidizer creates a dense hydroxylated layer at a lower operating temperature than other oxidants. To achieve the same level of reactivity, water requires higher process temperatures that are not compatible with new materials.
Multi-Patterning
Precise etch rates and unambiguous material characteristics
Emerging memory and logic devices need precise lithography to decrease line widths and achieve high storage density. Optical lithography does not have the resolution to meet these new critical dimension requirements. New sub 10nm critical dimensions require new patterning technologies like Double (SADP, SDDP) and Quadruple (SAQP) patterning.
Films must be engineered for patterning. Sacrificial spacers and hard masks (TiO2, SiN, SiO2, Al2O3) must be deposited with precise etch rates and unambiguous material characteristics.
Our study shows that H2O/H2O2 mixture is an exceptional oxidant for low temperature ALD, producing higher density films, greater etch resistance and superior quality metal-oxide dielectric films.
Read the latest findings on advantages of Hydrogen Peroxide for Spacers and Masks.
Overcoming Raoult’s Law
Compensating for two-component mixtures
Standard ‘anhydrous’ hydrazine has water concentration
Raoult’s Law says that when two-component solutions are vaporized, the individual components will vaporize at different rates.
Simple conversion of hydrogen peroxide liquid to gas increases the molar ratio to 100:1 or more.
The Peroxidizer compensates for Raoult’s Law, delivering gas at a molar ratio of 4:1.
Learn how Peroxidizer cheats Raoult’s Law.
Peroxidizer Performs
Processes to grow crystalline heat-spreading layers at low temperatures (The Peroxidizer delivers hydrogen peroxide gas at a range of concentrations, always with a 4:1 molar ratio of water to hydrogen peroxide. This low ratio of water to hydrogen peroxide significantly reduces process interference from water vapor.
Read more about the Peroxidizer.
Better than Bubblers or Vaporizers
Flow Control
Bubblers cannot overcome Raoult’s Law so output is constantly changing. Initial concentration is frequently less than 300 ppm of hydrogen peroxide along with about 25,000 ppm of water. However, as the liquid in the bubbler is consumed, the water content is reduced and the hydrogen peroxide concentration increases until explosive concentration is reached. The differential vaporization rates cause the liquid solution to concentrate and the concentration of gas sent to process to constantly change, preventing process control. Direct bubbling through the solution causes entrained microdroplets, leading to particles and staining on the wafer surface.
Temperature Control
Flash vaporizers require very high temperatures at or above boiling. This accelerates hydrogen peroxide decomposition and generates microdroplets in large quantity. Flash vaporizers operate by dripping hydrogen peroxide onto a hot plate, which can lead to a pickup in contamination and particles from the vaporizer surface. In an attempt to reduce micro-droplets, temperatures above 200°C are frequently used, which can double the decomposition rate of hydrogen peroxide. Instability also increases, as the preferential vaporization of water (100 °C boiling point) relative to hydrogen peroxide (150 °C boiling point) leads to uneven boiling and oscillations in the vapor generation.
Particle Generation
Flash vaporizers atomize hydrogen peroxide into small liquid micr-droplets and then try to convert them to vapor using a heated plate. Micro-droplet hydrogen peroxide and water are very difficult to fully convert to gas due to the high boiling point (150 °C) of hydrogen peroxide. This leads to spotting and particle formation that appears as watermarks. Flash vaporizers also have condensation problems when delivering into processes below 150 °C.
See Latest Research on Oxides
Latest News
Advantages of Hydrogen Peroxide in Spacer and Hard Mask ALD
PUBLISHED IN 2020
High volume emerging device manufacturing requires high film growth rates at low temperature. All thermal ALD provides a superior method for uniformity/conformality in HAR structures and precision etch rates. This study shows that H2O/H2O2 mixture is an exceptional oxidant for low temperature ALD, producing higher density films, greater etch resistance and superior quality metal-oxide dielectric films.
Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition, Annealing, and Surface Cleaning in Semiconductor Processing
PUBLISHED IN 2017
Chemicals used today for thin film oxidation do not meet these manufacturing challenges. This has forced R&D engineers to look for alternatives. The range of oxidants in use today include water, ozone and O2 plasma. Yet, in one way or another, all of these oxidants are deficient when fabricating these new device structures under atomic level constraints. To address these challenges, RASIRC has developed a new technology that enables the common liquid oxidant, hydrogen peroxide, to be converted into a controlled and repeatable oxidant gas.
Cheating Raoult’s Law
PUBLISHED IN 2015
Historically, volume usage of hydrogen peroxide, hydrogen peroxide, has been in the liquid phase, with only a few applications for hydrogen peroxide vapor (HPV). These include low-temperature surface sterilization of medical instruments, and in next generation thin film processing research on selective oxidation, cleaning, and atomic layer deposition. Raoult’s law has limited the widespread use of HPV. If the inherent limitations in Raoult’s law could be overcome, HPV could potentially replace ozone, oxygen plasma, steam, and water vapor for a wide variety of oxidation and sterilization applications.
RASIRC products generate and deliver water vapor, hydrogen peroxide and hydrazine gas in controlled, repeatable concentrations to critical processes.
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