BRUTE Hydrazine

Ultra-Dry Hydrazine Gas for Low Temperature Nitrides

BRUTE Hydrazine is an excellent, highly reactive nitride source for low temperature ALD needed in next generation processors and memory.

BRUTE® Hydrazine Enables Semiconductor Applications

High Uniformity Low Temperature SiN

Silicon nitride materials are used in many memory and logic device elements including dielectric insulating layers, device layers, liners, spacers, etch hardmasks and etch stops. These various elements must all have high uniformity/conformality on 3D structures, low wet etch rate, and excellent dielectric properties. Emerging device requirements include low temperature deposition, which is not attainable with thermal ammonia processes.

Low Resistivity

Metal nitride materials are used in many memory and logic device elements including contact barriers, capacitor electrodes in DRAM, gate electrodes in CMOS, passivation layers, liners and caps. These various elements must all have low resistivity in order to minimize parasitic losses encountered as device size shrinks.

Gate Stack Optimization

For gate stack optimization, researchers are investigating new high mobility channel materials such as SiGe, Ge, and InGaAs to meet market demands for faster, smaller, more power-efficient electronic devices. TiN electrodes, AlN2 heat spreaders, InGaN MicroLEDs, and SiN side walls require low thermal budgets and low resistivity for very thin, defect free III-V nitride films.

BRUTE Hydrazine Gas Provides More Effective Reactivity than Ammonia

High Uniformity Low Temperature SiN

Silicon nitride materials are used in many memory and logic device elements including dielectric insulating layers, device layers, liners, spacers, etch hardmasks and etch stops. These various elements must all have high uniformity/conformality on 3D structures, low wet etch rate, and excellent dielectric properties. Emerging device requirements include low temperature deposition, which is not attainable with thermal ammonia processes.

No Substrate Damage

Unlike traditional plasma approaches, hydrazine gas does not damage the substrate surface. Plasma requires a line of site, leading to uniformity problems in HAR structures used in memory applications. Nitrogen created by plasma methods cannot uniformly coat the internal sidewalls. Hydrazine gas enables low resistivity, supporting better electrical characteristics in subsequent layers.

Low Oxygen

Plasma methods have a tendency to incorporate oxygen into the film. Low temperature ammonia plasma methods lead to incomplete dissociation, leaving residual hydrogen N-H bonds. This leads to very low growth per cycle and poor electrical properties. Raising plasma power can cause physical damage to HAR structures and other very thin films. In contrast, BRUTE Hydrazine has purity levels of less than 1.0ppm in the gas phase.

Higher Growth Rate 

Researchers have found higher growth rates, higher density films and improved resistivity for films grown with hydrazine versus ammonia under similar low temperature conditions (Kummel). University of Texas (Dallas) researchers have reported similar effective results for hydrazine in low temperature deposition of silicon nitride.

Get Independent Research Results

BRUTE Hydrazine Gas Superior to Standard Hydrazine

Low Oxygen, High Purity

Standard ‘anhydrous’ hydrazine has water concentration ranging from 0.2-2.0%. BRUTE Hydrazine has purity levels of less than 50ppm in the liquid phase and less than 1.0ppm in the gas phase. This makes BRUTE Hydrazine purity levels comparable to semiconductor grade ammonia. 

How BRUTE Hydrazine Works

BRUTE Hydrazine combines anhydrous hydrazine and a low vapor pressure organic solvent that raises the flash point of the overall solution. Hydrazine vaporizes into the head space of the vaporizer and is delivered via carrier gas or vacuum delivery. The non-volatile solvent is not vaporized and is left behind in the ampoule. Precursor vapor pressure is maintained at levels viable for ALD under vacuum with or without a carrier gas. 

Professor Andrew C. Kummel (UCSD) presents findings

Crystalline Aluminum Nitride Deposition

Achieve crystalline Aluminum Nitride deposition with minimal oxygen contamination.

Processes to grow crystalline heat-spreading layers at low temperatures (≤400C) are of interest for several applications. Potential candidates for heat spreaders include diamond, hexagonal boron nitride (h-BN), aluminum nitride (AlN), and gallium nitride (GaN). AlN and GaN have already been reportedly grown at sufficiently low temperatures for widespread implementation.

See Latest Research on Nitrides.

Latest News

Low temperature Aluminium Nitride Deposition: Comparing Hydrazine and Ammonia

Aswin L.N. Kondusamy, Su Min Hwang, Zhiyang Qin, Antonio T. Lucero, Xin Meng, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim

HYDRAZINE 2019

READ THE REST

ALD TiN Evaluation Using BRUTE Hydrazine

Electronics Technology Dept., Tsukuba Laboratories, Research & Development Div., RASIRC and Taiyo Nippon Sanso

HYDRAZINE 2019

READ THE REST

BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity

Daniel Alvarez and Jeffrey Spiegelman

BRUTE HYDRAZINE 2017

READ THE REST

BRUTE Hydrazine Datasheet

PUBLISHED JULY 2018

RASIRC BRUTE Hydrazine delivers waterfree hydrazine (N2H4) gas into atomic layer deposition (ALD) processes in a repeatable method. BRUTE Hydrazine includes a vaporizer pre-loaded with hydrazine and a proprietary solvent. BRUTE Hydrazine can be used for a variety of metal nitride deposition processes at temperatures below 400°C.

READ THE REST

RASIRC Low Temperature ALD of Silicon and Metal Nitrides

PUBLISHED ON JULY 27TH 2018

RASIRC in collaboration with The University of Texas, Dallas has recently developed a low temperature thermal ALD process using the standard silicon precursor in CVD, HCDS and their new hydrazine formulation for a liquid source anhydrous hydrazine in a proprietary solvent.

READ THE REST

BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity

PUBLISHED ON 2017

Recent research showed that hydrazine can be purified and delivered safely for low temperature ALD. RASIRC developed a unique metal-oxide based purification material that can purify the hydrazine formulation down to levels suitable for semiconductor manufacturing. A specialty delivery system improves overall safety.

READ THE REST

RASIRC products generate and deliver water vapor, hydrogen peroxide and hydrazine gas in controlled, repeatable concentrations to critical processes.

Contact

info@rasirc.com
858.259.1220

7815 Silverton Avenue
San Diego, CA 92126
USA

Social Profiles

© Copyright 2021 RASIRC – All Rights Reserved – Privacy Statement