Ultra-Dry Hydrogen Peroxide Gas for Low Temperature Oxides
BRUTE Peroxide is an excellent oxidant source for low temperature ALD needed in next generation devices.
BRUTE® Peroxide Enables Semiconductor Applications
Low Temperature Oxide ALD
Next generation devices contain highly sensitive metal alloys which cannot be exposed to high temperatures. Traditional water ALD is unreactive or too slow at moderate temperatures. Methods involving ozone or oxygen plasma are overly aggressive and damage the surface. A new oxidant is needed which shows good reactivity (GPC) and deposits high quality oxides without adverse effects.
Due to physical limitations on Si, SiGe is the leading channel material candidate for next generation devices. High quality, thin, low defect density interface layers are required to retain semiconductor mobility. Traditional methods, such as water, ozone and O2 plasma, damage SiGe surfaces and generate poor electrical properties.
Area Selective Deposition
Area Selective Deposition requires intricate monolayers be deposited on a complex nanostructure without reacting or contaminating protecting groups on adjacent surfaces. Plasma requires line of site, making deposition on complex 3D/HAR structures difficult if not impossible. Ozone will react with adjacent structures.
BRUTE Peroxide Gas Provides More Effective Reactivity than Oxygen or Ozone
Low Temperature Oxide Growth
Tests with aluminum and silicon precursors show that hydrogen peroxide is more reactive at low temperatures. High quality oxide films may be deposited with use of a minimal chemistry consumed. When delivered ultra dry, Hydrogen peroxide gas can directly react with metal precursors as water no longer interferes with reaction kinetics.
High Nucleation Density
Hydrogen peroxide readily breaks into OH groups that efficiently attach to deposition surfaces. Nucleation density is improved 5x on SiGe and over 3x on germanium versus water. This leads to shorter ALD incubation periods and few interfacial defects on the resulting oxide films.
No Subsurface reaction
Studies show that dry hydrogen peroxide exhibits self-limiting behavior on Si, SiGe and InGaAs surfaces. Anhydrous hydrogen peroxide (HOOH) readily splits into OH radicals, ensuring a high concentration of -OH groups on the surface that serves as a large diffusion barrier. It is difficult for additional HOOH to penetrate this barrier. In contrast, HOH (water) splits into -H and -OH groups on the surface, resulting in low –OH population and a poor barrier for additional water to react.
High Quality Oxides
Researchers have demonstrated that high quality ZrO2, HfO2 and TiO2 may be deposited by hydrogen peroxide ALD. Composition and high k values are equivalent to those grown by optimized Ozone ALD without the adverse effect of ozone on surfaces.
Read the Latest Report.
BRUTE Peroxide Enables Versatility for Tight Process Control
Vacuum to Atmospheric, High to Low Output
BRUTE Peroxide delivers hydrogen peroxide gas into a wide range of process conditions from vacuum to atmospheric pressure. Hydrogen peroxide vapor pressure ranges from 0.4 Torr to 6.7 Torr, depending on temperature. Using BRUTE Peroxide, process engineers can precisely control their processes.
BRUTE Peroxide Gas from Innovative Design
BRUTE Peroxide includes a vaporizer preloaded with a proprietary non-volatile solvent that ensures safety. The hydrogen peroxide liquid concentration is kept below 30% by weight. Hydrogen peroxide diffuses across a proprietary membrane assembly, leaving the solvent behind. Once across the membrane, hydrogen peroxide is swept to process by a carrier gas or diffuses via vacuum conditions. Hydrogen peroxide vapor pressure is 0.5 Torr at room temperature. BRUTE Peroxide generates ultra-dry hydrogen peroxide gas and can be used with or without a carrier gas.
See Latest Research on Oxides.
BRUTE Peroxide Datasheet
PUBLISHED IN 2017
RASIRC BRUTE Peroxide provides a breakthrough method to deliver virtually water-free hydrogen peroxide (H2O2) gas into Atomic Layer Deposition (ALD) and Etch (ALE) processes. BRUTE Peroxide solution is preloaded in a RASIRC vaporizer. This solution combines hydrogen peroxide liquid and a proprietary solvent, which ensures that the liquid source remains below 30% by weight hydrogen peroxide.
Anhydrous Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition
PUBLISHED IN 2016
In order to minimize defects, enhance uniformity and increase device performance, researchers have begun to focus on the interface between dielectric materials and Si, SiGe, Ge and InGaAs. Most defects, which lead to charge traps and decreased mobility, are believed to occur in this interfacial region. While cartoons of ALD show nice monolayer continuous growth, ALD growth usually occurs in islands on the surface with 3 cycles typically needed for each monolayer. More surprising is that initiation of ALD growth on the surface is far from ideal. Initial film growth of the first monolayer may take up to 6-7 cycles. Research suggests that significant device improvements can be made if the surface is functionalized with a dense layer of hydroxyl groups –OH, prior to deposition.
RASIRC to Present Anhydrous Hydrogen Peroxide Surface Preparation and Enhanced Nucleation for ASD at ASD2018
PUBLISHED ON APRIL 24, 2018
Area selective deposition is becoming increasingly important for the immense scaling effort continuously taking place in the semiconductor industry for Logic and Memory Devices. Today double and multiple pattering schemes using Plasma Enhanced ALD are in High Volume Manufacturing (HVM) for all sub 28 nm nodes and any moment now the industry expect to ramp EUV lithography, possibly at the 7 nm Foundry Node. Beyond that in a joint effort the researchers and the industry are looking for alternative patterning methods and many of them are based on so called bottom-up patterning.
RASIRC products generate and deliver water vapor, hydrogen peroxide and hydrazine gas in controlled, repeatable concentrations to critical processes.
7815 Silverton Avenue
San Diego, CA 92126
© Copyright 2021 RASIRC – All Rights Reserved – Privacy Statement