Ultra-Dry Hydrazine Gas for Low Temperature Nitrides
BRUTE Hydrazine Gas Provides More Effective Reactivity than Ammonia
High Uniformity Low Temperature SiN
Silicon nitride materials are used in many memory and logic device elements including dielectric insulating layers, device layers, liners, spacers, etch hardmasks and etch stops. These various elements must all have high uniformity/conformality on 3D structures, low wet etch rate, and excellent dielectric properties. Emerging device requirements include low temperature deposition, which is not attainable with thermal ammonia processes.
No Substrate Damage
Unlike traditional plasma approaches, hydrazine gas does not damage the substrate surface. Plasma requires a line of site, leading to uniformity problems in HAR structures used in memory applications. Nitrogen created by plasma methods cannot uniformly coat the internal sidewalls. Hydrazine gas enables low resistivity, supporting better electrical characteristics in subsequent layers.
Low Oxygen
Plasma methods have a tendency to incorporate oxygen into the film. Low temperature ammonia plasma methods lead to incomplete dissociation, leaving residual hydrogen N-H bonds. This leads to very low growth per cycle and poor electrical properties. Raising plasma power can cause physical damage to HAR structures and other very thin films. In contrast, BRUTE Hydrazine has purity levels of less than 1.0ppm in the gas phase.
Higher Growth Rate
Researchers have found higher growth rates, higher density films and improved resistivity for films grown with hydrazine versus ammonia under similar low temperature conditions (Kummel). University of Texas (Dallas) researchers have reported similar effective results for hydrazine in low temperature deposition of silicon nitride.
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Latest News
Low temperature Aluminium Nitride Deposition: Comparing Hydrazine and Ammonia
Aswin L.N. Kondusamy, Su Min Hwang, Zhiyang Qin, Antonio T. Lucero, Xin Meng, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim
HYDRAZINE 2019
ALD TiN Evaluation Using BRUTE Hydrazine
Electronics Technology Dept., Tsukuba Laboratories, Research & Development Div., RASIRC and Taiyo Nippon Sanso
HYDRAZINE 2019
BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity
Daniel Alvarez and Jeffrey Spiegelman
BRUTE HYDRAZINE 2017
Low temperature Aluminium Nitride Deposition: Comparing Hydrazine and Ammonia
Aswin L.N. Kondusamy, Su Min Hwang, Zhiyang Qin, Antonio T. Lucero, Xin Meng, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim
HYDRAZINE 2019
ALD TiN Evaluation Using BRUTE Hydrazine
Electronics Technology Dept., Tsukuba Laboratories, Research & Development Div., RASIRC and Taiyo Nippon Sanso
HYDRAZINE 2019
BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity
Daniel Alvarez and Jeffrey Spiegelman
BRUTE HYDRAZINE 2017
BRUTE Hydrazine Datasheet
PUBLISHED JULY 2018
RASIRC BRUTE Hydrazine delivers waterfree hydrazine (N2H4) gas into atomic layer deposition (ALD) processes in a repeatable method. BRUTE Hydrazine includes a vaporizer pre-loaded with hydrazine and a proprietary solvent. BRUTE Hydrazine can be used for a variety of metal nitride deposition processes at temperatures below 400°C.
RASIRC Low Temperature ALD of Silicon and Metal Nitrides
PUBLISHED ON JULY 27TH 2018
RASIRC in collaboration with The University of Texas, Dallas has recently developed a low temperature thermal ALD process using the standard silicon precursor in CVD, HCDS and their new hydrazine formulation for a liquid source anhydrous hydrazine in a proprietary solvent.
BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity
PUBLISHED ON 2017
Recent research showed that hydrazine can be purified and delivered safely for low temperature ALD. RASIRC developed a unique metal-oxide based purification material that can purify the hydrazine formulation down to levels suitable for semiconductor manufacturing. A specialty delivery system improves overall safety.
RASIRC products generate and deliver water vapor, hydrogen peroxide and hydrazine gas in controlled, repeatable concentrations to critical processes.
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