BRUTE Hydrazine

Ultra-Dry Hydrazine Gas for Low Temperature Nitrides

Brute® Hydrazine Gas: Reducing Agent and Nitride Source

Low Temperature, High Aspect Ratio

Hydrazine is an excellent low temperature thermal ALD nitride source. Next generation devices have low thermal budgets and high aspect ratio structures that create new challenges for conformal III-V nitride films. Old solutions cannot meet these new challenges. Nitrogen from ammonia does not yield quality films below 400°C. Plasma delivery does not uniformly coat internal side walls of high aspect ratio structures and causes surface damage.

Advantages of Hydrazine Gas

Highly reactive, enabling thermal ALD at much less than 400°C
No line of sight required, providing uniform films on high aspect ratio structures
No oxygen or carbon, eliminating contamination
Fewer device defects
Better electrical performance

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RASIRC Study Shows Nitride Film Growth at 225°C with Hydrazine

RASIRC research shows that aluminum nitride can be grown thermally at 225°C without detrimental oxygen incorporation. The resulting paper is one of the first published demonstrating this ability, which will be useful for memory and logic devices as well as future semiconductor manufacturing.

PUBLISHED March 15, 2022

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China Grants Patent to RASIRC for BRUTE® Hydrazine

China has granted a patent related to the delivery of anhydrous hydrazine gas to process. This patent is part of family of patents around hydrazine, water, and hydrogen peroxide to enable safer and low temperature processing of next generation devices for microelectronic applications.

PUBLISHED March 3, 2022

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