Anhydrous Hydrogen Peroxide Gas in Precursor Format
BRUTE® Peroxide is more reactive than water vapor or ozone
RASIRC BRUTE Peroxide Benefits
- Provides H2O2 gas with minimal water
- Differentiates between H2O2 and water in process reactions
- Reacts faster and at lower temperatures than water
- Removes carbon and hydroxylates interface surfaces
- Improves compatibility with metal surfaces—less aggressive oxidant than ozone or O2 Plasma
- Superior penetration into 3D high aspect ratio microstructures
- Allows high concentration H2O2 delivery into vacuum and low pressure applications
- Increases interface hydroxyl density on Si, Ge and SiGe films
- Enables in situ cleaning without liquid
- Proprietary delivery process, ensuring higher purity
See Latest Research on Oxides.
Record Low Resistivity Titanium Nitride Film Fabricated by Thermal ALD – Ultra-dry hydrazine enables growth at low temperature
PUBLISHED JANUARY 18, 2022
Low resistivity is an indicator of a high-quality film that works well as a barrier layer or conductor. TiN thin films are used as diffusion barriers for cobalt (Co) and tungsten (W) metal layers as well as gate metal in CMOS devices due to their high electrical
conductivity and related low resistivity.
The Emergence of Hydrazine (N2H4) in Semiconductor Applications
PUBLISHED JANUARY, 2022
Historically, metal-nitride MOCVD and ALD ALD films have used Ammonia (NH3) for fabrication of advanced semiconductor devices. However, lower thermal budgets and shrinking 3-dimensional structures needed in next generation devices have exposed limitations with ammonia usage in semiconductor processing. However, these studies are far from comprehensive due to the vast number of possible metal nitrides along with a countless number of potentially useful metal precursor materials.
Technical White Paper – ALD Nitride Wizard
PUBLISHED JANUARY, 2022
In recent years production worthy, ultra-dry gas-phase Brute© hydrazine (N2H4) has been developed and made available by Rasirc. Prior to this work, attempts to deliver hydrazine gas were technically challenged due to moisture and safety issues which caused many studies to produce inconsistent results with oxygen incorporation into films.1-3 Therefore, little was actually known about low moisture gas phase N2H4reactivity in ALD and other potential nitridation applications.
BRUTE Peroxide Datasheet
PUBLISHED IN 2017
RASIRC BRUTE Peroxide provides a breakthrough method to deliver virtually water-free hydrogen peroxide (H2O2) gas into Atomic Layer Deposition (ALD) and Etch (ALE) processes. BRUTE Peroxide solution is preloaded in a RASIRC vaporizer. This solution combines hydrogen peroxide liquid and a proprietary solvent, which ensures that the liquid source remains below 30% by weight hydrogen peroxide.
Anhydrous Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition
PUBLISHED IN 2016
In order to minimize defects, enhance uniformity and increase device performance, researchers have begun to focus on the interface between dielectric materials and Si, SiGe, Ge and InGaAs. Most defects, which lead to charge traps and decreased mobility, are believed to occur in this interfacial region. While cartoons of ALD show nice monolayer continuous growth, ALD growth usually occurs in islands on the surface with 3 cycles typically needed for each monolayer. More surprising is that initiation of ALD growth on the surface is far from ideal. Initial film growth of the first monolayer may take up to 6-7 cycles. Research suggests that significant device improvements can be made if the surface is functionalized with a dense layer of hydroxyl groups –OH, prior to deposition.
RASIRC products generate and deliver water vapor, hydrogen peroxide and hydrazine gas in controlled, repeatable concentrations to critical processes.
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