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The Emergence of Hydrazine (N2H4) in Semiconductor Applications
Historically, metal-nitride MOCVD and ALD films have used Ammonia (NH3) for fabrication of advanced semiconductor devices. However, lower thermal budgets and shrinking 3-dimensional structures needed in next generation devices have exposed limitations with ammonia usage in semiconductor processing. Many of these challenges could be overcome by using gaseous hydrazine which is significantly more reactive than ammonia.